Research on Predistortion Process Technology of Temperature Compensation Bias

doi:10.13190/jbupt.200505.102.huj

JOURNAL OF BEIJING UNIVERSITY OF POSTS AND TELECOM ›› 2005, Vol. 28 ›› Issue (5): 102-105.doi: 10.13190/jbupt.200505.102.huj

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Research on Predistortion Process Technology of Temperature Compensation Bias

HU Jun,LIU Wenqing

Anhui Institute of Optic and Fine Mechanics， Chinese Academy of Sciences, Hefei 230031, China

Online:2005-10-28 Published:2005-10-28

Abstract

Abstract:

A kind of predistortion power amplifier by two radio frequency transistors reciprocal compensating was designed. And the temperature compensation circuit was presented. This predistortion power amplifier is verified by many experiments to improve intermodulation distortion(IMD) by 10?dB for a 20?MHz signal bandwidth, and the temperature compensation circuit can maintain IMD change within ±15?dB over the temperature range.

Key words: bias, predistortion, temperature compensation, intermodulation distortion

CLC Number:

TN830.6

HU Jun,LIU Wenqing. Research on Predistortion Process Technology of Temperature Compensation Bias[J]. JOURNAL OF BEIJING UNIVERSITY OF POSTS AND TELECOM, 2005, 28(5): 102-105.

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Research on Predistortion Process Technology of Temperature Compensation Bias

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